Micro-Droplet Bio-Chemical Diagnosis System
Introduction
ITRC offers ICP-RIE service as a powerful tool to deep etch silicon wafer. Inductively coupled plasma-reactive ion etching (ICP-RIE) is classified as a dry ion-etching processing technology, which has characteristics of high density and low pressure (HDLP). ICP-RIE has the highest aspect ratio fabrication capability at present and is one of the primary technologies in deep silicon etching. ICP-RIE is proved to be much more useful and is highly valued for the applications in fabrication of silicon structures such as accelerometers and gyroscopes. Comparing with traditional manufacturing methods, this newly transformed ICP-RIE technology not only breaks through the production size limit but can also provided products with even higher qualities.
Properties
- Size: 4" silicon wafer
- Material: photoresist, SiO2
- Etching rate: 2 µm/ min
- Surface roughness: ~ 30 nm
- Uniformity: ± 5%
- Etching depth: more than 500 µm for fully penetrated silicon etch
- Aspect ratio: 25 − 30 (max.)
- Side wall angle: 90º ± 1º
- Etching area ratio: less than 50%
- Selectivity: 70 : 1 (PR) − 120 : 1 (SiO2)
Applications
- Fiber-optic communication
- Micro optical switch
- Nano-structure etching
- Accelerometer
- Gyroscope
2009/8/14 updated
