Atomic Layer Deposition Machine

Introduction

ITRC has been dedicating in the design and process development of atomic layer deposition (ALD). The ALD process uses the alternating precursor pulses to create self-saturated chemical reaction on the surface, which can lead to self-limiting growth with many features such as excellent thickness control, good large-area uniformity and coating coverage on nanostructures. ALD can meet the rising needs in nanotechnology, especially for next-generation semiconductor devices and organic-based solar cell. As a pioneer of ALD, we provide tutorial courses on system design, process development and characterization training of ALD technique. In addition, a technology transfer entitled "Oxide ALD by Using Liquid Precursors" is available for companies and institutes.

Advantages

Precise thickness control

Principle of ALD process

Good step-coverage
Low process temperature
Excellent thickness uniformity

Specifications

Wafer size: 4 inch, 8 inch and 12 inch
Growth temperature: Room temperature to 300ºC
Growth rate: Al₂O₃ ~ 1 Å/cycle
- ZnO ~ 2 Å/cycle
- TiO₂ ~ 0.6 Å/cycle

Linear growth of ZnO

Applications

High-k dielectric gate oxide for MOSFET and DRAM capacitor
Protective coating on nano- or microstructures
Passivation layer or photo-electrode for solar cells
Copper diffusion barrier

Al₂O₃ nanotubes Hollow Al₂O₃ nanospheres Al₂O₃ on butterfly‘s scales

2009/8/14 updated